Download Advances in Electroceramic Materials: Ceramic Transactions, by K. M. Nair, D. Suvorov, R. W. Schwartz, R. Guo PDF

By K. M. Nair, D. Suvorov, R. W. Schwartz, R. Guo

ISBN-10: 0470408448

ISBN-13: 9780470408445

This compilation is an invaluable one-stop source for figuring out crucial concerns in advances in electroceramic fabrics, protecting subject matters comparable to layout, synthesis, characterization, and homes and purposes. This quantity encompasses a choice of papers from the complicated Dielectric fabrics and digital units and Electroceramics applied sciences symposia held in the course of MS&T 08.

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Additional info for Advances in Electroceramic Materials: Ceramic Transactions, Volume 204 (Ceramic Transactions Series)

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After sintering, the samples. The relative densities of sintered Lotgering factor increased well. The samples are also shown in this figure. Advances in Electroceramic Materials · 43 Fabrication of SrTi4Bi4015 Piezoelectric Ceramics with Oriented Structure Figure 9. SEM micrographs of microstructure of the sintered samples. 8μηι. Observed face was the cross section in parallel to magnetic field, (a),(d) 1050°C, (b),(e) 1100°C, (c),(f) 1200 °C. higher was the Lotgering factor at green samples, the higher was it at sintered samples.

S. Speck, Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films, Appl. Phys. , 80, 1978 - 1980 (2002). 8 B. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, X. Zeng, W. Si, and X. X. eSro/riOs films, Appl. Phys. , 78, 533 535(2001). 9 T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, The effect of stress on the dielectric properties of barium strontium titanate thin films, Appl. Phhys. , 75, 2129-2131 (1999). 10 W. Chang, A.

E ω Q. 3%. 3%-Y doped BST thin films is 70% higher than that of the undoped BST thin films, while maintaining the dielectric loss lower than 1%. 3% Y-doped BST thin films also show much greater tunability than that of undoped BST thin films. 5 0 Applied voltage / film thickness (MV/cm) Figure 3 Permittivity and loss tangent as a function of electrical fields The J-V data shown in Fig. 4 shows that by Y-doping, the leakage current density at room temperature decreases by as much as a factor of 10 at both positive and negative polarity.

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